What we're looking for

We are looking for new materials and manufacturing approaches to enable the next generation of cost-effective, high-performance SWIR photodetectors. Ideal solutions should balance performance, scalability, reliability, and environmental impact while ensuring seamless integration with modern semiconductor manufacturing. We are interested in materials that satisfy our must-have requirements, with III-V compounds being the most desirable option.

Solutions of interest include:

• SWIR photodetector materials (e.g., InGaAs, InSb, etc.)
• Optimized growth techniques (e.g., heteroepitaxial growth processes)
• 2D materials for monolithic integration

Our must-have requirements are:

• Detection wavelength: 900-1700 nm
• Dark current: 3,000 nA/cm²
• Quantum efficiency: 20%

Our nice-to-have's are:

• Processes that enable the growth of III-V compounds or other suitable materials on low-cost seed substrates like silicon (Si)

What's out of scope:

• Relies on expensive substrates (e.g., InGaAs-on-InP)
• Includes quantum dots (QDs) and organic materials
• Contains RoHS-regulated elements
• Not compatible with thin-film deposition techniques, such as MBE (molecular beam epitaxy), MOCVD (metal-organic chemical vapor deposition), and HVPE (hydride vapor phase epitaxy)